UT4812L-S08-R datasheet(3/9 Pages) VBSEMI

No. de pieza	UT4812L-S08-R

Descripción Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 5 V

VGS =4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.000

0.016

0.032

0.048

0.064

0.080

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

0.0

1.7

3.4

5.1

6.88.5

VDS =15 V

VDS =10 V

ID =5A

VDS =20 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1234

TC = 25 °C

TC =125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

110

220

330

440

550

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

100

125

150

ID =5A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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UT4812L-S08-R

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