UT4812L-S08-R datasheet(4/9 Pages) VBSEMI

No. de pieza	UT4812L-S08-R

Descripción Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

ID = 250 µA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.03

0.06

0.09

0.12

0.15

012

345

910

ID =5A

TJ =25 °C

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

Time (s)

1000

0.1

0.01

0.001

100

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

100 ms

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

10 s

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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UT4812L-S08-R

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