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UT4812L-S08-R Datasheet(PDF) 5 Page - VBsemi Electronics Co.,Ltd

No. de pieza UT4812L-S08-R
Descripción Electrónicos  Dual N-Channel 30-V (D-S) MOSFET
PDF  9 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT4812L-S08-R Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
1.5
3.0
4.5
6.0
7.5
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0.7
1.4
2.1
2.8
3.5
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT4812L-S08-R
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