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FDMF2011 Datasheet(PDF) 17 Page - ON Semiconductor

No. de pieza FDMF2011
Descripción Electrónicos  High Performance 100V Smart Power Stage Module
PDF  31 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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FDMF2011 Datasheet(HTML) 17 Page - ON Semiconductor

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© 2016 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMF2011 Rev.1.0
16
Typical Performance Characteristics (Q1 N-Channel)
Tj = 25°C unless otherwise noted.
0
1
2
3
4
5
0
30
60
90
120
150
VGS = 8 V
VGS = 6 V
VGS = 10 V
PULSE DURATION = 80 µ
µ
µ
µ
s
DUTY CYCLE = 0.5% MAX
VGS = 5 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 38. On Region Characteristics
0
30
60
90
120
150
0
1
2
3
4
5
6
VGS = 6 V
PULSE DURATION = 80 µ
µ
µ
µ
s
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
V
GS = 8 V
V
GS = 10 V
V
GS = 5 V
Figure 39. Normalized On-Resistance vs. Drain
Current and Gate Voltage
-75
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
ID = 20 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (
oC)
Figure 40. Normalized On Resistance vs. Junction
Temperature
4
5
6
7
8
9
10
0
20
40
60
80
100
TJ = 125 oC
ID = 20 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 µ
µ
µ
µ
s
DUTY CYCLE = 0.5% MAX
Figure 41. On-Resistance vs. Gate to Source Voltage
3
4
5
6
7
8
9
0
30
60
90
120
150
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 µ
µ
µ
µ
s
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 42. Transfer Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
100
150
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 43. Source to Drain Diode Forward Voltage vs.
Source Current



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