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FDMF2011 Datasheet(PDF) 11 Page - ON Semiconductor

No. de pieza FDMF2011
Descripción Electrónicos  High Performance 100V Smart Power Stage Module
PDF  31 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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FDMF2011 Datasheet(HTML) 11 Page - ON Semiconductor

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© 2016 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMF2011 Rev.1.0
10
Power MOSFET specifications (FDMF2011)
TJ= +25°C unless otherwise noted.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
High Side MOSFET, Q1
BVDSS
Drain-Source Breakdown Voltage
IDS=250uA, VGS=0V
100
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage Current
VDS=0V, VGS=+/-20V
-
-
100
nA
VGS(th)
Gate-Source Threshold Voltage
VDS=VGS , IDS=250uA
2
3.1
4
V
RDS(ON)
Drain –Source On-Resistance
VGS=10V, IDS=20A
-
7.7
8.9
m
QG
Total Gate Charge
VGS=0V to 10V, VDD=50V, IDS=20A
-
25
-
nC
QGS
Gate-Source Charge
-
8.5
-
nC
QGD
Gate-Drain “Miller” Charge
-
5.2
-
nC
QOSS
Total Output Charge
-
31.3
-
nC
RG
Series Gate Resistance
-
0.7
-
Drain-Source Diode Characteristics
VSD
Source to Drain Forward Voltage
VHG-VPH=0V, ISD = 2A
-
0.7
1.2
V
VHG-VPH=0V, ISD = 20A
-
0.8
1.3
tRR
Reverse Recovery Time
IF = 20A, diF/dt = 100A/us
-
59
95
ns
QRR
Reverse Recovery Charge
-
77
123
nC
tRR
Reverse Recovery Time
IF = 20A, diF/dt = 300A/us
-
50
80
ns
QRR
Reverse Recovery Charge
-
140
224
nC
Low Side MOSFET, Q2
BVDSS
Drain-Source Breakdown Voltage
IDS=250uA, VGS=0V
100
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage Current
VDS=0V, VGS=+/-20V
-
-
100
nA
VGS(th)
Gate-Source Threshold Voltage
VDS=VGS , IDS=250uA
2
3.3
4
V
RDS(ON)
Drain –Source On-Resistance
VGS=10V, IDS=20A
-
7.3
8.9
m
QG
Total Gate Charge
VGS=0V to 10V, VDD=50V, IDS=20A
-
25
33
nC
QGS
Gate-Source Charge
-
8.9
-
nC
QGD
Gate-Drain “Miller” Charge
-
6
-
nC
QOSS
Total Output Charge
-
31.3
-
nC
RG
Series Gate Resistance
-
0.9
-
Drain-Source Diode Characteristics
VSD
Source to Drain Forward Voltage
VHG-VPH=0V, ISD = 2A
-
0.7
1.2
V
VHG-VPH=0V, ISD = 20A
-
0.8
1.3
tRR
Reverse Recovery Time
IF = 20A, diF/dt = 100A/us
-
58
93
ns
QRR
Reverse Recovery Charge
-
86
137
nC
tRR
Reverse Recovery Time
IF = 20A, diF/dt = 300A/us
-
48
77
ns
QRR
Reverse Recovery Charge
-
146
234
nC
Table 5. FDMF2011 MOSFET Electrical Specifications



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