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STGWT30V60F Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STGWT30V60F
Descripción Electrónicos  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
PDF  19 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT30V60F Datasheet(HTML) 5 Page - STMicroelectronics

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DocID025005 Rev 4
5/19
STGFW30V60F, STGW30V60F, STGWT30V60F
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
see Figure 25
-45
-
ns
tr
Current rise time
-
16
-
ns
(di/dt)on
Turn-on current slope
-
1500
-
A/µs
td(off)
Turn-off delay time
-
189
-
ns
tf
Current fall time
-
19
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW30V60DF.
Turn-on switching losses
-
383
-
µJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
233
-
µJ
Ets
Total switching losses
-
616
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 25
-42
-
ns
tr
Current rise time
-
17
-
ns
(di/dt)on
Turn-on current slope
-
1337
-
A/µs
td(off)
Turn-off delay time
-
193
-
ns
tf
Current fall time
-
32
-
ns
Eon
(1)
Turn-on switching losses
-
794
-
µJ
Eoff
(2)
Turn-off switching losses
-
378
-
µJ
Ets
Total switching losses
-
1172
-
µJ



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