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STGWT30V60F Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGWT30V60F
Descripción Electrónicos  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
PDF  19 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT30V60F Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2014
DocID025005 Rev 4
1/19
19
STGFW30V60F,
STGW30V60F, STGWT30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
1
1
1
1
2
3
TO-247
TO-3P
1
2
3
1
2
3
TO-3PF
Tab
Table 1. Device summary
Order codes
Marking
Package
Packaging
STGFW30V60F
GFW30V60F
TO-3PF
Tube
STGW30V60F
GW30V60F
TO-247
Tube
STGWT30V60F
GWT30V60F
TO-3P
Tube
www.st.com


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