STGWT30V60F datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STGWT30V60F

Descripción Electrónicos	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

PDF	19 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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3 / 19 page

DocID025005 Rev 4

3/19

STGFW30V60F, STGW30V60F, STGWT30V60F

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-3P

TO-247

TO-3PF

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

60(1)

Limited by maximum junction temperature.

Continuous collector current at TC = 100 °C

30(1)

ICP

(2)

Pulse width limited by maximum junction temperature.

Pulsed collector current

120

120(1)

VGE

Gate-emitter voltage

±20

PTOT

Total dissipation at TC = 25 °C

260

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s; Tc = 25 °C)

3.5

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-3P

TO-247

TO-3PF

RthJC

Thermal resistance junction-case

0.58

2.6

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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