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STM32F446RC Datasheet(PDF) 113 Page - STMicroelectronics

No. de pieza STM32F446RC
Descripción Electrónicos  8- to 14-bit parallel camera interface up to 54 Mbytes
PDF  201 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F446RC Datasheet(HTML) 113 Page - STMicroelectronics

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DocID027107 Rev 5
113/201
STM32F446xC/E
Electrical characteristics
174
Table 48. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed based on test during characterization.
Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
300
600
Program/erase parallelism
(PSIZE) = x 32
-
250
500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-8
16
s
Program/erase parallelism
(PSIZE) = x 16
-5.5
11
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
Table 49. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
3.5
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V



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