7N10G-TN3-R datasheet(4/7 Pages) UTC

4 / 7 page

7N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-394.J



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID =250µA

100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID =250µA

0.1

V/°C

Drain-Source Leakage Current

IDSS

VDS =100V, VGS =0V

µA

VDS =80V, TC =125°C

µA

Gate-Source Leakage Current

IGSS

VGS =±25V, VDS =0V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID =250µA

2.0

4.0

Static Drain-Source On-Resistance

RDS(ON)

VGS =10V, ID =3.5A

0.144 0.35

Ω

Forward Transconductance

gFS

VDS =40V, ID =0.85A (Note 1)

1.85

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =25V, VGS=0V, f=1.0MHz

380

450

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=50V, ID=1.3A

(Note 1,2)

14.3

Gate Source Charge

QGS

4.2

Gate Drain Charge

QGD

3.2

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.5A, RG=25Ω

(Note 1,2)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS =7A, VGS =0V

1.5

Reverse Recovery Time

trr

VGS=0V, IS=7.3A,

diF/dt=100A/µs

Reverse Recovery Charge

QRR

150

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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