7N10G-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

7N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-394.J



ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain -Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±25

Continuous Drain Current

TC =25°C

TC = 70°C

6.8

Pulsed Drain Current (Note 2)

IDM

Avalanche Current (Note 2)

IAR

Repetitive Avalanche Energy (Note 2)

EAR

0.2

Single Pulsed Avalanche Energy (Note 3)

EAS

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

Power Dissipation

SOT-223

2.0

TO-251/TO-252

TO-252D

2.5

Derate above 25°C

SOT-223

0.016

W/°C

TO-251/TO-252

TO-252D

0.02

Operating Junction Temperature

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L =26mH, IAS =1.7A, VDD =25V, RG =25Ω Starting TJ =25°C

4. ISD ≤7.3A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ =25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

θJA

62.5

°C/W

TO-251/TO-252

TO-252D

Junction to Case

SOT-223

θJC

°C/W

TO-251/TO-252

TO-252D

7.5

Note: When mounted on the minimum pad size recommended (PCB Mount)

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