CHA3694-QDG

31-40GHz Variable Gain Amplifier

Ref. : DSCHA3694QDG9322 - 18 Nov 09

4/16

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Device thermal performances:

All the figures given in this section are obtained assuming that the QFN device is cooled

down only by conduction through the package thermal pad (no convection mode

considered).

The temperature is monitored at the package back-side interface (Tcase) as shown below.

The system maximum temperature must be adjusted in order to guarantee that Tcase

remains below than the maximum value specified in the next table. So, the system PCB

must be designed to comply with this requirement.

A derating must be applied on the dissipated power if the Tcase temperature can not be

maintained below than the maximum temperature specified (see the curve Pdiss. Max) in

order to guarantee the nominal device life time (MTTF).

Recommanded max. junction temperature (Tj max)

:

151 °C

Junction temperature absolute maximum rating

:

175 °C

Max. continuous dissipated power @ Tcase=

85

°C

:

0,56 W

=> Pdiss derating above Tcase

85

°C

:

9 mW/°C

Junction-Case thermal resistance (Rth J-C)

(2)

:

<117 °C/W

Min. package back side operating temperature

(3)

:

-40 °C

Max. package back side operating temperature

(3)

:

85 °C

Min. storage temperature

:

-55 °C

Max. storage temperature

:

125 °C

(1) Derating at junction temperature constant = Tj max

(2) Rth J-C is calculated for a worst case where the hotter junction of the MMIC is considered.

(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).

5.6

DEVICE THERMAL SPECIFICATION : CHA3694-QDG

0

0,1

0,2

0,3

0,4

0,5

0,6

-50

-25

0

25

50

75

100

125

Tcase (°C)

Pdiss. Max. (W)

Tcase

Example of QFN 16L 3x3

back-side view, temperature

reference point (Tcase) location.