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AN3169 Datasheet(PDF) 5 Page - STMicroelectronics |
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AN3169 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() AN3169 Triac technologies and immunity Doc ID 17194 Rev 1 5/12 Table 1. Measured IGT and dV/dt parameters of tested samples (1) 1. IGT is measured with standard 30 Ω / 12 V circuit and dV/dt with standard test circuit: open gate and 400 V applied peak voltage P/N Techno. Sample Igt (mA) dV/dt (V/µs) 125 °C Q1 Q2 Q3 Positive Negative Z0409N Top 1 1.02 3.37 4.69 118 94 2 0.90 2.90 3.49 140 135 3 1.02 2.99 4.08 120 95 4 0.98 2.72 3.69 160 138 T410-800 Mesa 1 1.57 5.82 3.43 200 450 2 1.67 7.14 3.69 180 710 3 1.52 5.43 3.31 180 525 4 1.65 6.99 3.64 170 630 ACST2 Planar 1 3.54 6.20 6.83 >5000 >5000 2 3.48 6.20 6.82 >5000 >5000 3 3.45 6.20 6.83 >5000 >5000 4 3.47 6.20 6.73 >5000 >5000 COMP.1A Planar 1 4.89 4.05 5.10 500 470 2 4.85 4.28 5.22 580 500 3 4.86 4.05 5.05 530 430 4 4.85 4.16 5.34 540 560 COMP.2A Planar 1 5.27 6.25 5.65 >5000 >5000 2 4.57 4.36 4.27 >5000 >5000 3 3.81 3.39 3.09 >5000 >5000 4 4.82 4.68 4.49 >5000 >5000 |
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