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AN3169 Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza AN3169
Descripción Electrónicos  Technology performance comparison of Triacs subjected to fast transient voltages
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3169 Datasheet(HTML) 9 Page - STMicroelectronics

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AN3169
IEC 61000-4-4 Tests
Doc ID 17194 Rev 1
9/12
Figure 8.
Product rankings in IEC 61000-4-4 tests
2.4
Sensitivity impact
According to previous results, it is difficult to conclude anything about impact of device
sensitivity on immunity. We have even seen that some devices with good dV/dt capability
can present poor immunity level. But, such a conclusion is difficult to sustain because we
have compared here components from different processes.
To better analyze the sensitivity impact, we have also performed some tests of other Triacs
coming from the same process. We took some T405-800 devices which are manufactured
with the same process as the T410-800. The T405-800 device is guaranteed to present IGT
currents of less than 5 mA. The samples we have tested present measured IGT levels
approximately half those of the T410 devices we have tested, and this for the three
quadrants. It means that we measured an IGT level of approximately 0.75 mA, 2.30 mA and
1.75 mA respectively for quadrants 1, 2 and 3. The maximum burst level that these devices
were able to withstand was around 1 kV, i.e. 30% lower than the T410-800. This result
highlights that sensitivity has also a strong impact on immunity, as is well known. But this
statement is only valid if one compares two devices from the same process.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Max burst levels (kV)
COMP.2A
COMP.1A
Z0409N
T410-800
ACST2



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