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AN3169 Datasheet(PDF) 9 Page - STMicroelectronics |
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AN3169 Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 12 page ![]() AN3169 IEC 61000-4-4 Tests Doc ID 17194 Rev 1 9/12 Figure 8. Product rankings in IEC 61000-4-4 tests 2.4 Sensitivity impact According to previous results, it is difficult to conclude anything about impact of device sensitivity on immunity. We have even seen that some devices with good dV/dt capability can present poor immunity level. But, such a conclusion is difficult to sustain because we have compared here components from different processes. To better analyze the sensitivity impact, we have also performed some tests of other Triacs coming from the same process. We took some T405-800 devices which are manufactured with the same process as the T410-800. The T405-800 device is guaranteed to present IGT currents of less than 5 mA. The samples we have tested present measured IGT levels approximately half those of the T410 devices we have tested, and this for the three quadrants. It means that we measured an IGT level of approximately 0.75 mA, 2.30 mA and 1.75 mA respectively for quadrants 1, 2 and 3. The maximum burst level that these devices were able to withstand was around 1 kV, i.e. 30% lower than the T410-800. This result highlights that sensitivity has also a strong impact on immunity, as is well known. But this statement is only valid if one compares two devices from the same process. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Max burst levels (kV) COMP.2A COMP.1A Z0409N T410-800 ACST2 |
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