2N7002 datasheet(2/4 Pages) MAKOSEMI

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Small Signal MOSFET Transistor

2N7002

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=10

μA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250

μA

2.1

2.5

Gate-body Leakage

Forward

Reverse

IGSS

VDS=0V, VGS=20V

VDS=0V, VGS=-20V

100

-100

VDS=60V, VGS=0V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V,Tj=125℃

500

μA

On-state Drain Current

ID(On)

VGS=10V, VDS

≥2.0VDS(ON)

500

2700

Drain-Source on-voltage

VDS(ON)

VGS=10V,ID=500mA

VGS=5V,ID=50mA

0.6

0.09

3.75

1.5

Forward transconductance

gFS

VDS

≥2.0VDS(ON),ID=200mA

320

Static drain-Source on-resistance

RDS(ON)

VGS=10V,ID=500mA

VGS=10V,ID=500mA,Tj=100℃

VGS=5.0V,ID=50mA

VGS=5.0V,ID=50mA, Tj=100℃

1.2

1.7

2.4

7.5

13.5

7.5

13.5

Ω

Drain-Source diode forward

voltage

VSD

VGS=0V,ID=115mA

0.88

1.5

Input capacitance

CISS

Output capacitance

COSS

Reverse transfer capacitance

CRSS

VDS=25V,VGS=0V,f=1.0MHz

Turn-On Delay Time

tD(ON)

Turn-Off Delay Time

tD(OFF)

VDD = 30V, ID= 0.2A,

RL = 150

Ω, VGS= 10V,

RGEN= 25

Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

MAKO Semiconductor Co., Limited

www.makosemi.hk

4008-378-873

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