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2N7002 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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2N7002 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1 / 4 page ![]() Small Signal MOSFET Transistor 2N7002 1 FEATURES High Density Cell Design For Low RDS(ON)。 Voltage Controlled Small Switch. Rugged and Reliable. High Saturation Current Capability. APPLICATIONS N-channel enhancement mode effect transistor. Switching application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2N7002 7002/702/72* SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage 60 V VDGR Drain-Gate voltage(RGS ≤1MΩ) 60 V VGSS Gate -Source voltage - continuous -Non Repetitive (tp<50 μs) ±20 ±40 V ID Maximum Drain current -continuous -Pulsed 115 800 mA PD Power Dissipation 180 mW RθJA Thermal resistance,Junction-to-Ambient 6 00 ℃/W TJ, Tstg Junction and Storage Temperature - 50-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified MAKO Semiconductor Co., Limited www.makosemi.hk 4008-378-873 |
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