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STM32F215RE Datasheet(PDF) 73 Page - STMicroelectronics

No. de pieza STM32F215RE
Descripción Electrónicos  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  175 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F215RE Datasheet(HTML) 73 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
174
6.3.5
Embedded reset and power control block characteristics
The parameters given in Table 18 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 13.
Table 18. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling
edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising
edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling
edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising
edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling
edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling
edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising
edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling
edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising
edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling
edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling
edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling
edge)
2.95
3.03
3.09
V
VPVDhyst(1)
PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst(1)
PDR hysteresis
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V



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