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STM8S103F2U6TR Datasheet(PDF) 68 Page - STMicroelectronics

No. de pieza STM8S103F2U6TR
Descripción Electrónicos  Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C
PDF  113 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S103F2U6TR Datasheet(HTML) 68 Page - STMicroelectronics

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Memory characteristics
10.3.5
RAM and hardware registers
Table 36: RAM and hardware registers
Unit
Min
Conditions
Parameter
Symbol
V
VIT-max
(2)
Halt mode (or reset)
Data retention mode
(1)
VRM
(1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2) Refer to the Operating conditions section for the value of V
IT-max
Flash program memory/data EEPROM memory
Table 37: Flash program memory/data EEPROM memory
Unit
Max
Typ
Min
(1)
Conditions
Parameter
Symbol
V
5.5
2.95
fCPU ≤ 16 MHz
Operating voltage
(all modes, execution/
write/erase)
VDD
ms
6.6
6
Standard programming time
(including erase) for
tprog
byte/word/block (1 byte/
4 bytes/64 bytes)
3.33
3
Fast programming time for
1 block (64 bytes)
3.33
3
Erase time for 1 block
(64 bytes)
terase
cycles
10 k
TA = +85 °C
Erase/write cycles
(2)
(program memory)
NRW
1 M
300 k
TA = +125 °C
Erase/write cycles
(data memory)
(2)
years
20
TRET = 55°C
Data retention (program
and data memory) after 10k
tRET
erase/write cycles at
TA = +55 °C
DocID15441 Rev 6
68/113
STM8S103K3 STM8S103F3 STM8S103F2
Electrical characteristics



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