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STM32F101X6 Datasheet(PDF) 48 Page - STMicroelectronics

No. de pieza STM32F101X6
Descripción Electrónicos  Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
PDF  79 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101X6 Datasheet(HTML) 48 Page - STMicroelectronics

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Electrical characteristics
STM32F101x4, STM32F101x6
48/79
Doc ID 15058 Rev 5
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 28.
Flash memory endurance and data retention
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
1.
Based on device characterization, not tested in production.
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Table 26.
PLL characteristics
Symbol
Parameter
Value
Unit
Min(1)
Typ
Max(1)
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA = –40 to +85 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA = –40 to +85 °C
20
40
ms
tME
Mass erase time
TA = –40 to +85 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 36 MHz with 1 wait
state, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 36 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
TA = –40 °C to 85 °C
10
kcycles
tRET
Data retention
TA = 85 °C, 1 kcycle
(2)
2.
Cycling performed over the whole temperature range.
30
Years
TA = 55 °C, 10 kcycle
(2)
20



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