STM32F101X6 datasheet(33/79 Pages) STMICROELECTRONICS

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STM32F101x4, STM32F101x6

Electrical characteristics

Doc ID 15058 Rev 5

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5.3.4

Embedded reference voltage

The parameters given in Table 11 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

5.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 11: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to Dhrystone 2.1 code.

Maximum current consumption

The MCU is placed under the following conditions:

●

All I/O pins are in input mode with a static value at VDD or VSS (no load)

●

All peripherals are disabled except if it is explicitly mentioned

●

The Flash access time is adjusted to fHCLK frequency (0 wait state from 0 to 24 MHz, 1

wait state from 24 to 36 MHz)

●

Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)

●

When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK

The parameters given in Table 12 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

Table 11.

Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +85 °C 1.16

1.20

1.24

TS_vrefint

(1)

Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when reading

the internal reference voltage

5.1

17.1(2)

Guaranteed by design, not tested in production.

µs

VRERINT

(2)

Internal reference voltage spread

over the temperature range

VDD = 3 V ±10 mV

TCoeff

(2)

Temperature coefficient

100

ppm/

°C

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