MCP87018 datasheet(1/14 Pages) MICROCHIP

No. de pieza	MCP87018

Descripción Electrónicos	High-Speed N-Channel Power MOSFET

PDF	14 Pages

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Fabricante Electrónico	MICROCHIP [Microchip Technology]

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 2013 Microchip Technology Inc.

DS22329A-page 1

MCP87018

Features:

• Low Drain-to-Source On Resistance (RDS(ON))

• Low Total Gate Charge (QG) and Gate-to-Drain

Charge (QGD)

• Low Series Gate Resistance (RG)

•Fast Switching

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking and Automotive Applications

Description:

The MCP87018 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87018 to achieve a low QG for a given RDS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low RG, the low FOM of the MCP87018

allows high efficiency power conversion with reduced

switching and conduction losses.

Package Type

Product Summary Table:

Unless otherwise indicated, TA = +25°C

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BVDSS

25

—

V

VGS = 0V, ID = 250 µA

Gate-to-Source Threshold Voltage

VGS(TH)

11.3

1.6

V

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—1.8

2.2

mΩ

VGS = 4.5V, ID = 25A

—1.5

1.9

mΩ

VGS = 10V, ID = 25A

Total Gate Charge

QG

—

32.5

37

nC

VDS = 12.5V, ID = 25A, VGS = 4.5V

Gate-to-Drain Charge

QGD

—13—

nC

VDS = 12.5V, ID = 25A

Series Gate Resistance

RG

—1.5

—

Ω

—

Thermal Characteristics

Thermal Resistance Junction-to-X

RθJX

——

56

°C/W

Note 1

Thermal Resistance Junction-to-Case

RθJC

——

1.4

°C/W

Note 2

Note

1:

RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

2:

RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.

S

G

S

D

1

2

3

4

5

6

7

8

PDFN 5 x 6

High-Speed N-Channel Power MOSFET

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