MCP87018 datasheet(5/14 Pages) MICROCHIP

No. de pieza	MCP87018

Descripción Electrónicos	High-Speed N-Channel Power MOSFET

PDF	14 Pages

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Fabricante Electrónico	MICROCHIP [Microchip Technology]

Página de inicio	http://www.microchip.com

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 2013 Microchip Technology Inc.

DS22329A-page 5

MCP87018

Note:

Unless otherwise indicated, TA = +25°C.

FIGURE 2-7:

Gate-to-Source Threshold

Voltage vs. Temperature.

FIGURE 2-8:

Source-to-Drain Current vs.

Source-to-Drain Voltage.

FIGURE 2-9:

Maximum Drain Current vs.

Temperature.

FIGURE 2-10:

Single-Pulse Unclamped

Inductive Switching.

FIGURE 2-11:

Drain-to-Source Breakdown

Voltage vs. Temperature.

1.1

1.3

1.5

1.7

D = 250 μA

0.7

0.9

-75 -50 -25

75 100 125 150 175

C - Case Temperature (°C)

0.1

100

C = +25°C

C = +125°C

0.001

0.01

0.0

0.2

0.4

0.6

0.8

1.0

SD - Source-to-Drain Voltage (V)

100

120

100

125

150

C - Case Temperature (˚C)

GS = 4.5V

GS = 10V

100

C = +25°C

C = +150°C

0.01

0.1

100

AV - Avalanche Time (ms)

D = 250 μA

-60 -40 -20

80 100 120 140 160

C - Case Temperature(°C)

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