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DTW2070 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd

No. de pieza DTW2070
Descripción Electrónicos  Power MOSFET Low-Profile Through-Hole Fast Switching
PDF  10 Pages
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Fabricante Electrónico  DINTEK [DinTek Semiconductor Co,.Ltd]
Página de inicio  http://www.daysemi.jp/
Logo DINTEK - DinTek Semiconductor Co,.Ltd

DTW2070 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd

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2
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
c. Uses IRF640/SiHF640 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)a
RthJA
-40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mAc
-0.29
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 11 Ab
-
-
0.09
Forward Transconductance
gfs
VDS = 50 V, ID = 11 Ad
6.7
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
-
1300
-
pF
Output Capacitance
Coss
-
430
-
Reverse Transfer Capacitance
Crss
-
130
-
Total Gate Charge
Qg
VGS = 10 V
ID = 20 A, VDS = 160 V,
see fig. 6 and 13b, c
--
70
nC
Gate-Source Charge
Qgs
--
13
Gate-Drain Charge
Qgd
--
39
Turn-On Delay Time
td(on)
VDD = 100 V, ID = 20 A,
Rg = 9.1 , RD = 5.4 , see fig. 10b, c
-14
-
ns
Rise Time
tr
-51
-
Turn-Off Delay Time
td(off)
-45
-
Fall Time
tf
-36
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
20
A
Pulsed Diode Forward Currenta
ISM
--
72
Body Diode Voltage
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μsb, c
-
300
610
ns
Body Diode Reverse Recovery Charge
Qrr
-3.4
7.1
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
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DTW2070



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