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DTW2070 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd |
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DTW2070 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd |
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2 / 10 page ![]() 2 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRF640/SiHF640 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a RthJA -40 °C/W Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAc -0.29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 11 Ab - - 0.09 Forward Transconductance gfs VDS = 50 V, ID = 11 Ad 6.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d - 1300 - pF Output Capacitance Coss - 430 - Reverse Transfer Capacitance Crss - 130 - Total Gate Charge Qg VGS = 10 V ID = 20 A, VDS = 160 V, see fig. 6 and 13b, c -- 70 nC Gate-Source Charge Qgs -- 13 Gate-Drain Charge Qgd -- 39 Turn-On Delay Time td(on) VDD = 100 V, ID = 20 A, Rg = 9.1 , RD = 5.4 , see fig. 10b, c -14 - ns Rise Time tr -51 - Turn-Off Delay Time td(off) -45 - Fall Time tf -36 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 20 A Pulsed Diode Forward Currenta ISM -- 72 Body Diode Voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μsb, c - 300 610 ns Body Diode Reverse Recovery Charge Qrr -3.4 7.1 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G www.din-tek.jp DTW2070 |
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