L6482 datasheet(12/73 Pages) STMICROELECTRONICS

12 / 73 page

Electrical characteristics

L6482

12/73

Doc ID 023768 Rev 2

RpumpLS

Charge pump low-side RDS(ON) resistance

Iboot

Average boot current

2.6

Gate driver outputs

IGATE,Sink

Programmable high-side and low-side gate

sink current

VS = 38 V

VHVGX - VOUTX > 3 V

VLVGX > 3 V

2.4

5.6

5.4

10.6

11.3

20.7

17.3

30.7

23.2

40.8

50.2

77.8

113

IGATE,Source

Programmable high-side and low-side gate

source current

VS = 38 V

VBOOTX - VHVGX > 3.5

VCC-VLVGX > 3.5 V

2.8

5.2

5.8

10.2

112

IOB

High-side and low-side turn-off overboost

gate current

103

117

RCLAMP(LS) Low-side gate driver Miller clamp resistance

6.5

RCLAMP(HS) High-side gate driver Miller clamp resistance

VGATE-CLAMP High-side gate voltage clamp

IGATE-CLAMP=100 mA

16.7

tcc

Programmable constant gate current time(2)

TCC=’00000’

125

TCC= 11111

3750

tOB

Programmable. Turn-off overboost; gate

current time(2)

TBOOST=’001’,

internal oscillator

62.5

TBOOST=’111’

1000

IDSS

Leakage current

OUT = VS

100

μA

OUT = GND

-100

μA

Rise time

IGATE = 96 mA

VCC = 15 V

CGATE = 15 nF

2.5

μs

Fall time

IGATE = 96 mA

VCC = 15 V

CGATE = 15 nF

2.5

μs

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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