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SW19N10 Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

No. de pieza SW19N10
Descripción Electrónicos  N-channel MOSFET
PDF  7 Pages
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Fabricante Electrónico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de inicio  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW19N10 Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
100
-
-
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
-
0.1
-
V/oC
I
DSS
Drain to source leakage current
V
DS=100V, VGS=0V
-
-
1
uA
V
DS=80V, TC=125
oC
-
-
100
uA
I
GSS
Gate to source leakage current, forward
V
GS=20V, VDS=0V
-
-
100
nA
V
GS=-20V, VDS=0V
-
-
-100
nA
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.0
-
4.0
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID = 30A
-
-
0.1
Ω
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
-
600
780
pF
C
oss
Output capacitance
-
165
215
C
rss
Reverse transfer capacitance
-
32
40
t
d(on)
Turn on delay time
V
DS=50V, ID=57A, RG=25Ω
-
7.5
25
ns
tr
Rising time
-
150
310
t
d(off)
Turn off delay time
-
20
50
t
f
Fall time
-
65
140
Q
g
Total gate charge
V
DS=80V, VGS=10V, ID=57A
-
19
25
nC
Q
gs
Gate-source charge
-
3.9
-
Q
gd
Gate-drain charge
-
9.0
-
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-
-
15.6
A
I
SM
Pulsed source current
-
-
62.4
A
V
SD
Diode forward voltage drop.
I
S=57A, VGS=0V
-
-
1.5
V
T
rr
Reverse recovery time
I
S=57A, VGS=0V,
dI
F/dt=100A/us
-
78
-
ns
Q
rr
Breakdown voltage temperature
-
200
-
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 270uH, I
AS = 57A, VDD = 25V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 57A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
2/7
SW19N10
SAMWIN



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