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SW19N10 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW19N10 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 7 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize R DS(ON), low gate charge and high rugged avalanche characteristics. N-channel MOSFET Absolute maximum ratings Thermal characteristics Symbol Parameter Value Unit Min. Typ. Max. R thjc Thermal resistance, Junction to case 2.0 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 62.5 oC/W Mar. 2011. Rev. 2.0 1/7 BV DSS : 100V I D : 17A R DS(ON) : 0.1 ohm SW19N10 SAMWIN 1 2 3 1 2 3 1. Gate 2. Drain 3. Source TO-252 1 2 3 TO-220 Symbol Parameter Value Unit V DSS Drain to Source Voltage 100 V I D Continuous Drain Current (@T C=25 oC) 17 A Continuous Drain Current (@T C=100 oC) 11 A I DM Drain current pulsed (note 1) 68 A V GS Gate to Source Voltage ± 25 V E AS Single pulsed Avalanche Energy (note 2) 215 mJ E AR Repetitive Avalanche Energy (note 1) 7.5 mJ dv/dt Peak diode Recovery dv/dt (note 3) 6.0 V/ns P D Total power dissipation (@T C=25 oC) 62.5 W Derating Factor above 25oC 0.5 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Item Sales Type Marking Package Packaging 1 SW P 19N10 SW19N10 TO-220 TUBE 2 SW D 19N10 SW19N10 TO-252 REEL Order Codes |
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