MPC5646C datasheet(61/114 Pages) FREESCALE

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MPC5646C Microcontroller Data Sheet, Rev. 3

Preliminary—Subject to Change Without Notice

Freescale Semiconductor

Table 26 shows the data flash memory program and erase characteristics.

Table 26. Data flash memory—Program and erase specifications

Symbol

Parameter

Value

Unit

Min

Typ1

1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to

change pending device characterization.

Initial

max2

2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

Max3

3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum

values are characterized but not guaranteed.

Twprogram

Word (32 bits) program time4

4 Actual hardware programming times. This does not include software overhead.

—30

500

µs

T16Kpperase

16 KB block pre-program and erase time

—

700

800

5000

Teslat

D Erase Suspend Latency

—

µs

tESRT

C Erase Suspend Request Rate

—

tPABT

D Program Abort Latency

—

µs

tEAPT

D Erase Abort Latency

—

µs

Table 27. Flash memory module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

P/E

C Number of program/erase cycles per

block for 16 Kbyte blocks over the

operating temperature range (TJ)

—

100,000

100,000 cycles

Number of program/erase cycles per

block for 32 Kbyte blocks over the

operating temperature range (TJ)

—

10,000

100,000 cycles

Number of program/erase cycles per

block for 128 Kbyte blocks over the

operating temperature range (TJ)

—

1,000

100,000 cycles

Retention CC

C Minimum data retention at 85 °C

average ambient temperature1

1 Ambient temperature averaged over duration of application, not to exceed recommended product operating

temperature range.

Blocks with 0–1,000 P/E

cycles

—

years

Blocks with 10,000 P/E

cycles

—

years

Blocks with 100,000 P/E

cycles

5—

years

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