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MPC5646C Datasheet(PDF) 46 Page - Freescale Semiconductor, Inc |
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MPC5646C Datasheet(HTML) 46 Page - Freescale Semiconductor, Inc |
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46 / 114 page ![]() MPC5646C Microcontroller Data Sheet, Rev. 3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 46 Most of the time for the applications, PI/O< PINT and may be neglected. On the other hand, PI/O may be significant, if the device is configured to continuously drive external modules and/or memories. An approximate relationship between PD and TJ (if PI/O is neglected) is given by: PD = K / (TJ + 273 °C) Eqn. 2 Therefore, solving equations 1 and 2: K = PD (TA + 273 °C) + RJA PD 2 Eqn. 3 Where: K is a constant for the particular part, which may be determined from Equation 3 by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ may be obtained by solving equations 1 and 2 iteratively for any value of TA. 4.6 I/O pad electrical characteristics 4.6.1 I/O pad types The device provides four main I/O pad types depending on the associated alternate functions: • Slow pads—These pads are the most common pads, providing a good compromise between transition time and low electromagnetic emission. • Medium pads—These pads provide transition fast enough for the serial communication channels with controlled current to reduce electromagnetic emission. • Fast pads—These pads provide maximum speed. These are used for improved Nexus debugging capability. • Input only pads—These pads are associated to ADC channels and 32 kHz low power external crystal oscillator providing low input leakage. • Low power pads—These pads are active in standby mode for wakeup source. Also, medium/slow and fast/medium pads are available in design which can be configured to behave like a slow/medium and medium/fast pads depending upon the slew-rate control. Medium and fast pads can use slow configuration to reduce electromagnetic emission, at the cost of reducing AC performance. 4.6.2 I/O input DC characteristics Table 13 provides input DC electrical characteristics as described in Figure 5. |
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