IXFP4N100QM

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.5

4.3

S

C

iss

1185

pF

C

oss

V

130

pF

C

rss

65

pF

t

d(on)

17

ns

t

r

15

ns

t

d(off)

32

ns

t

f

18

ns

Q

g(on)

43.5

nC

Q

gs

V

V

6.2

nC

Q

gd

23.0

nC

R

thJC

2.7

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

4

A

I

SM

Repetitive, Pulse Width Limited by T

JM

16

A

V

SD

I

1.5

V

t

rr

250

ns

Q

RM

480

nC

I

RM

6.16

A

Note 1. Pulse test, t

≤ 300μs; duty cycle, d ≤ 2 %.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12

3

OVERMOLDED TO-220 (I

XFP...M)

I

V

Resistive Switching Times

V

V

R

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.