IXFP4N100QM datasheet(1/4 Pages) IXYS

No. de pieza	IXFP4N100QM

Descripción Electrónicos	HiPerFET Power MOSFET Q-Class

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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1 / 4 page

DS100165(06/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 1.5mA

3.0

5.0 V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS= 0V

25

μA

T

J = 125°C

1 mA

R

DS(on)

V

GS = 10V, ID = 2A, Note 1

3.0

Ω

IXFP4N100QM

Features

Plastic Overmolded Tab for Electrical

Isolation

International Standard Package

Avalanche Rated

Fast Intrinsic Diode

Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages

High Power Density

Easy to Mount

Space Savings

V

DSS

= 1000V

I

D25

= 2.2A

R

DS(on) ≤

≤≤≤≤ 3.0

Ω

HiPerFETTM

Power MOSFET

Q-Class

Advance Technical Information

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, High dv/dt

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

2.2

A

I

DM

T

C = 25°C, pulse width limited by TJM

16

A

I

A

T

C = 25°C4

A

E

AS

T

C = 25°C

700

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C46

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

2.5

g

G = Gate

D = Drain

S = Source

OVERMOLDED

(IXFP...M) OUTLINE

G

D S

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IXFP4N100QM Datasheet(PDF) 1 Page - IXYS Corporation

IXFP4N100QM Datasheet(HTML) 1 Page - IXYS Corporation

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