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JCS650 Datasheet(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS650 Datasheet(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 10 page ![]() R JCS650 版本:201008A 5/10 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 0 2 4 6 8 10 1214 1618 2022 0.05 0.06 0.07 0.08 0.09 0.10 Note:T j=25℃ V GS=10V V GS=20V I D [A] 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25℃ 150℃ V S D Source-Drain voltage[V] 10 -1 10 0 10 1 0 1x10 3 2x10 3 3x10 3 4x10 3 5x10 3 6x10 3 7x10 3 8x10 3 C iss=Cgs+Cgd(Cds=shorted) C oss=Cds+Cgd C rss=Cgd V DS Drain-Source Voltage [V] 0 2 4 6 8 10 12 0 102030 405060 708090 100 110 120 V DS=160V V DS=100V V DS=40V Q g Toltal Gate Charge [nC] On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics 2468 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=40V V GS Gate-Source Voltage[V] 25℃ 150℃ 110 10 V GS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25℃ V DS [V] |
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