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ZXMP6A13G Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza ZXMP6A13G
Descripción Electrónicos  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A13G Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
4 of 8
www.diodes.com
December 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A13G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
⎯
⎯
V
ID = -250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS= -60V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
⎯
⎯
V
ID= -250μA, VDS= VGS
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
⎯
⎯
0.390
Ω
VGS= -10V, ID= -0.9A
0.595
VGS= -4.5V, ID= -0.8A
Forward Transconductance (Notes 5 & 6)
gfs
⎯
1.8
⎯
S
VDS= -15V, ID= -0.9A
Diode Forward Voltage (Note 5)
VSD
⎯
-0.85
-0.95
V
IS= -0.8A, VGS= 0V, TJ=25°C
Reverse recovery time (Note 6)
trr
21.1
⎯
ns
IS= -0.9A, di/dt= 100A/μs,
TJ=25°C
Reverse recovery charge (Note 6)
Qrr
⎯
19.3
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 6)
Input Capacitance
Ciss
⎯
219
⎯
pF
VDS= -30V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
⎯
25.7
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
20.5
⎯
pF
Total Gate Charge (Note 7)
Qg
⎯
2.9
⎯
nC
VGS= -4.5V
VDS= -30V
ID= -0.9A
Total Gate Charge (Note 7)
Qg
⎯
5.9
⎯
nC
VGS= -10V
Gate-Source Charge (Note 7)
Qgs
⎯
0.74
⎯
nC
Gate-Drain Charge (Note 7)
Qgd
⎯
1.5
⎯
nC
Turn-On Delay Time (Note 7)
tD(on)
⎯
1.6
⎯
ns
VDD= -30V, VGS= -10V
ID= -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 7)
tr
⎯
2.2
⎯
ns
Turn-Off Delay Time (Note 7)
tD(off)
⎯
11.2
⎯
ns
Turn-Off Fall Time (Note 7)
tf
⎯
5.7
⎯
ns
Notes:
5. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.



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