ZXMP6A13G

Document Number DS32032 Rev. 4 - 2

2 of 8

www.diodes.com

December 2009

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXMP6A13G

Characteristic

Symbol

Value

Unit

Drain-Source voltage

-60

V

Gate-Source voltage

±20

V

Continuous Drain current

(Note 2)

-2.3

A

-1.9

(Note 1)

-1.7

Pulsed Drain current

(Note 3)

-7.8

A

Continuous Source current (Body diode)

(Note 2)

-4.1

A

Pulsed Source current (Body diode)

(Note3 )

-7.8

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Note 1)

2.0

16

W

mW/

°C

(Note 2)

3.9

31

Thermal Resistance, Junction to Ambient

(Note 1)

62.5

°C/W

(Note 2)

32.0

Thermal Resistance, Junction to Lead

(Note 4)

9.8

Operating and storage temperature range

-55 to 150

°C

Notes:

1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

2. Same as note (1), except the device is measured at t

≤ 10 sec.

3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

4. Thermal resistance from junction to solder-point (at the end of the drain lead).