NTMFS4841NH

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3

°C/W

Junction−to−Ambient – Steady State (Note 1)

57.8

Junction−to−Ambient – Steady State (Note 2)

143.5

Junction−to−Ambient (tv10 s)

22.1

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

28

mV/°C

Zero Gate Voltage Drain Current

1

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.1

2.5

V

Negative Threshold Temperature Coefficient

5.6

mV/°C

Drain−to−Source On Resistance

11.5 V

4.8

7.0

mW

4.8

8.8

11.6

8.5

Forward Transconductance

57

S

CHARGES AND CAPACITANCES

Input Capacitance

1565

2113

pF

Output Capacitance

325

439

Reverse Transfer Capacitance

173

268

Total Gate Charge

11.3

16.7

nC

Threshold Gate Charge

1.4

2.1

Gate−to−Source Charge

5.3

7.9

Gate−to−Drain Charge

4.5

6.8

Total Gate Charge

24.4

33

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

12.1

18.1

ns

Rise Time

23.3

34.9

Turn−Off Delay Time

14.1

21.1

Fall Time

4.9

7.3

Turn−On Delay Time

7.2

10.7

ns

Rise Time

20.6

30.9

Turn−Off Delay Time

21.9

32.9

Fall Time

2.9

4.4

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.