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NTMFS4841NHT3G Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza NTMFS4841NHT3G
Descripción Electrónicos  Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL
PDF  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4841NHT3G Datasheet(HTML) 5 Page - ON Semiconductor

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NTMFS4841NH
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5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
15
10
5
0
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
CISS
COSS
TJ = 25°C
CRSS
0
1.5
3
4.5
6
7.5
9
10.5
12
0
2
4
6
8
10 12 14 16 18 20 22 24
VDD = 15 V
VGS = 0 V − 11.5 V
ID = 30 A
TJ = 25°C
QT
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
QGD
QGS
1
10
100
1
10
100
tr
td(off)
td(on)
tf
VDS = 15 V
ID = 15 A
VGS = 11.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (W)
0
5
10
15
20
25
30
0.5
0.6
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage versus
Current
TJ = 25°C
VGS = 0 V
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS
VDS
1
10
100
1000
0.1
1
10
100
100 ms
1 ms
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
0
10
20
30
40
50
60
70
80
90
100
110
25
50
75
100
125
150
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = 25.6 A



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