HFS6N90 datasheet(3/7 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,Dec 2005

DS = 450V

DS = 180V

DS = 720V

※ Note : I

D = 6.0A

G, Total Gate Charge [nC]

-1

500

1000

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

-1

-2

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

DS, Drain-Source Voltage [V]

Typical Characteristics

-1

150

-55

※ Notes :

1. V

DS = 50V

2. 250μ s Pulse Test

GS, Gate-Source Voltage [V]

1.5

2.0

2.5

3.0

3.5

4.0

4.5

GS = 20V

GS = 10V

※ Note : T

J = 25

℃

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150 ℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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