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ZXMP6A17KTC Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A17KTC Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() ZXMP6A17K Document Revision: 2 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A17K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ ⎯ V ID= -250μA, VDS= VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ 0.125 Ω VGS= -10V, ID= -2.3A 0.190 VGS= -4.5V, ID= -1.9A Forward Transconductance (Notes 7 & 8) gfs ⎯ 4.7 ⎯ S VDS= -15V, ID= -2.2A Diode Forward Voltage (Note 7) VSD ⎯ -0.85 -0.95 V IS= -2A, VGS= 0V Reverse recovery time (Note 8) trr 25.1 ⎯ ns IS= -1.7A, di/dt= 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 27.2 ⎯ nC DYNAMIC CHARACTERISTICS ( Note 8) Input Capacitance Ciss ⎯ 637 ⎯ pF VDS= -30V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 70 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 53 ⎯ pF Total Gate Charge Qg ⎯ 9.0 ⎯ nC VGS= -4.5V VDS= -30V ID= -2.2A Total Gate Charge Qg ⎯ 17.7 ⎯ nC VGS= -10V Gate-Source Charge Qgs ⎯ 1.6 ⎯ nC Gate-Drain Charge Qgd ⎯ 4.4 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.6 ⎯ ns VDD= -30V, VGS= -10V ID= -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 9) tr ⎯ 3.4 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 26.2 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 11.3 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. |
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