IRFBC20LPBF datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91107

S-Pending-Rev. A, 03-Jun-08

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRFBC20/SiHFBC20 data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient (PCB

Mounted, steady-state)a

RthJA

-40

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-2.5

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

600

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mAc

-0.88

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

µA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 1.3 Ab

4.4

Forward Transconductance

gfs

VDS = 50 V, ID = 1.3 Ac

1.4

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5c

350

Output Capacitance

Coss

-48

Reverse Transfer Capacitance

Crss

-8.6

Total Gate Charge

VGS = 10 V

ID = 2.0 A, VDS = 360 V,

see fig. 6 and 13b, c

Gate-Source Charge

Qgs

3.0

Gate-Drain Charge

Qgd

8.9

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 2.0 A,

RG = 18 Ω, RD = 150 Ω, see fig. 10b, c

-10

Rise Time

-23

Turn-Off Delay Time

td(off)

-30

Fall Time

-25

Internal Source Inductance

Between lead, and center of die contact

7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

2.2

Pulsed Diode Forward Currenta

ISM

8.0

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb, c

290

580

Body Diode Reverse Recovery Charge

Qrr

0.67

1.3

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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