Document Number: 91107

www.vishay.com

S-Pending-Rev. A, 03-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

FEATURES

• Surface Mount (IRFBC20S/SiHFBC20S)

• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)

• Available in Tape and Reel (IRFBC20S/SiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

the accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application. The

through-hole version (IRFBC20L/SiHFBC20L) is a available

for low-profile applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRFBC20/SiHFBC20 data and test conditions.

PRODUCT SUMMARY

600

4.4

18

3.0

8.9

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRFBC20SPbF

IRFBC20LPbF

SiHFBC20S-E3

SiHFBC20L-E3

SnPb

IRFBC20S

IRFBC20L

SiHFBC20S

SiHFBC20L

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 20

2.2

A

1.4

8.0

Linear Derating Factor

0.40

W/°C

84

mJ

2.2

A

5.0

mJ

Maximum Power Dissipation

3.1

W

50

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply