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STL100NH3LL Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STL100NH3LL
Descripción Electrónicos  N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT??(6x5) STripFET™III Power MOSFET
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL100NH3LL Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL100NH3LL
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
12.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 12.5 A
VGS= 4.5 V, ID= 12.5 A
0.0032
0.004
0.0035
0.005
Ω
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
VDS =10 V, ID = 12.5 A
30
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
4450
655
50
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 25 A
VGS =4.5 V
(see Figure 8)
30
12.5
10
40
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
12
3
Ω



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