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STL100NH3LL Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STL100NH3LL
Descripción Electrónicos  N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT??(6x5) STripFET™III Power MOSFET
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL100NH3LL Datasheet(HTML) 3 Page - STMicroelectronics

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STL100NH3LL
Electrical ratings
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
(1)
1.
Continuous mode
Gate-source voltage
± 16
V
VGS
(2)
2.
Guaranteed for test time
≤15ms
Gate-source voltage
± 18
V
ID
(3)
3.
The value is rated according Rthj-c
Drain current (continuous) at TC = 25 °C
100
A
ID
(3)
Drain current (continuous) at TC = 100 °C
71
A
ID
(5)
Drain current (continuous) at TC=100 °C
15.6
A
IDM
(4)
4.
Pulse width limited by safe operating area
Drain current (pulsed)
100
A
ID
(5)
5.
The value is rated according Rthj-pcb
Drain current (continuous) at TC = 25 °C
25
A
PTOT
(3)
Total dissipation at TC = 25 °C
80
W
PTOT
(5)
Total dissipation at TC = 25 °C
4
W
Derating factor
0.03
W/°C
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain) (steady state)
1.56
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-ambient
31.3
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current
7.5
A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=7.5 A)
150
mJ



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