LTC3336

4

Rev. A

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PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VOUT Pull-Down Resistor

in Shutdown

EN = 0V

10

kΩ

VOUT Pull-Down Resistor in VOUT

Overvoltage Condition

1

MΩ

VOUT Overvoltage Detection Threshold

as Percentage of Output Setting

5

%

IPEAK (Inductor Peak Current)

10mA IPEAK Setting, ISW Rising

8.7

10

13

mA

30mA IPEAK Setting, ISW Rising

26

30

39

mA

100mA IPEAK Setting, ISW Rising

87

100

130

mA

300mA IPEAK Setting, ISW Rising

260

300

390

mA

IVALLEY (Inductor Valley Current)

10mA IPEAK Setting, ISW Falling

9

mA

30mA IPEAK Setting, ISW Falling

27

mA

100mA IPEAK Setting, ISW Falling

90

mA

300mA IPEAK Setting, ISW Falling

270

mA

Deliverable Output Current

10mA IPEAK Setting

l

8.3

mA

30mA IPEAK Setting

l

25

mA

100mA IPEAK Setting

l

83

mA

300mA IPEAK Setting

l

250

mA

IZERO

Inductor Current Going into Sleep, as a

Percentage of IPEAK

17

%

P-Channel MOSFET Switch

On-Resistance

10mA IPEAK Setting

16

Ω

30mA IPEAK Setting

5.3

Ω

100mA IPEAK Setting

1.6

Ω

300mA IPEAK Setting

0.53

Ω

N-Channel MOSFET Switch

On-Resistance

10mA IPEAK Setting, 5V VOUT Setting

9.6

Ω

30mA IPEAK Setting, 5V VOUT Setting

3.2

Ω

100mA IPEAK Setting, 5V VOUT Setting

0.96

Ω

300mA IPEAK Setting, 5V VOUT Setting

0.32

Ω

P-Channel MOSFET Switch Leakage

0

15

nA

N-Channel MOSFET Switch Leakage

0

15

nA

INTVCC Voltage

VOUT Settings < 2.4V, 0 ≤ I(INTVCC) ≤ 10µA

1.9

2

2.2

V

VOUT Settings ≥ 2.4V, 0 ≤ I(INTVCC) ≤ 10µA

VOUT

V

VUVLO Undervoltage Lockout

VIN Rising

1.95

2.2

V

VIN Falling

1.5

1.75

V

VIH Digital Input High Voltage

Pins EN, IPK[1:0]

INTVCC – 0.15V

V

Pins OUT[3:0]

VOUT – 0.15V

V

VIL Digital Input Low Voltage

Pins EN, IPK[1:0], OUT[3:0]

0.15

V

ELECTRICAL CHARACTERISTICS The

l

denotes the specifications which apply over the specified operating

junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 7.2V unless otherwise noted.

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3336 is specified over the –40°C to 125°C operating

junction temperature range. High junction temperatures degrade operating

lifetimes. Note the maximum ambient temperature consistent with

these specifications is determined by specific operating conditions in

conjunction with board layout, the rated package thermal impedance and

other environmental factors.

Note 3: TJ is calculated from the ambient TA and power dissipation

PD according to the following formula: TJ = TA + (PD • θJA).

Note 4: Dynamic supply current is higher due to gate charge being

delivered at the switching frequency.

Note 5: The falling threshold is specified as a percentage of the average

of the measured sleep and wake-up thresholds for each selected output

voltage and the rising threshold is equal to the sleep threshold.