AS1130-BSST datasheet(9/67 Pages) AMSOSRAM

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ams Datasheet

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[v2-01] 2016-Oct-12

AS1130 − Electrical Characteristics

Note(s):

1. Guaranteed by design.

Figure 8:

Logic Inputs/Outputs Characteristics

Note(s):

1. Available on request, see Ordering & Contact Information.

Open Detection Level

Threshold

VDD-

0.4

VDD-

0.1

Short Detection Level

Threshold

770

900

fOSC

Oscillator Frequency

0.9

1.1

MHz

fREFRESH

Display Scan Rate

12x11 matrix

0.29

0.33

0.36

kHz

tRSTN

Reset Pulse Width Low

500

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IIH, IIL

Logic Input Current

VIN = 0V or VDD

-1

μA

VIH

CMOS Logic High Input Voltage

0.7 x VDD

VIL

CMOS Logic Low Input Voltage

0.3 x VDD

ΔVI

CMOS Hysteresis Voltage

0.3

VIH

Mobile Logic High Input Voltage (1)

1.6

VIL

Mobile Logic Low Input Voltage(1)

0.6

ΔVI

Hysteresis Voltage (1)

0.1

VOL(SDA)

SDA Output Low Voltage

ISINK = 3mA

0.4

VOL(IRQ)

IRQ Output Low Voltage

ISINK = 3mA

0.4

VOL(SYNC_

OUT)

Sync Clock Output Low Voltage

ISINK = 1mA

0.4

VOH(SYNC_

OUT)

Sync Clock Output High Voltage

ISOURCE = 1mA

VDD-0.4

Capacitive Load for Each Bus Line

400

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ISEG

Imax Imin

–

Imax Imin

--------------------------- 100

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