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AFP2325AS23RG Datasheet(PDF) 2 Page - Alfa-MOS Technology Corporation

No. de pieza AFP2325AS23RG
Descripción Electrónicos  100V P-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Fabricante Electrónico  ALFA-MOS [Alfa-MOS Technology Corporation]
Página de inicio  http://www.alfa-mos.com/
Logo ALFA-MOS - Alfa-MOS Technology Corporation

AFP2325AS23RG Datasheet(HTML) 2 Page - Alfa-MOS Technology Corporation

  AFP2325AS23RG Datasheet HTML 1Page - Alfa-MOS Technology Corporation AFP2325AS23RG Datasheet HTML 2Page - Alfa-MOS Technology Corporation AFP2325AS23RG Datasheet HTML 3Page - Alfa-MOS Technology Corporation AFP2325AS23RG Datasheet HTML 4Page - Alfa-MOS Technology Corporation AFP2325AS23RG Datasheet HTML 5Page - Alfa-MOS Technology Corporation AFP2325AS23RG Datasheet HTML 6Page - Alfa-MOS Technology Corporation  
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AFP2325A
100V P-Channel
Alfa-MOS
Technology
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
www.alfa-mos.com
Rev.B Jan. 2018
Page 2
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-100
V
Gate –Source Voltage
VGSS
±20
V
TA=25℃
-1.0
Continuous Drain Current(TJ=150℃)
TA=70℃
ID
-0.5
A
Pulsed Drain Current
IDM
-4.0
A
Continuous Source Current(Diode Conduction)
IS
-1.0
A
TA=25℃
1.25
Power Dissipation
TA=70℃
PD
0.8
W
Operating Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
120
℃
/W
Electrical Characteristics
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-100
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
nA
VDS=-80V,VGS=0V
-1
Zero Gate Voltage Drain Current
IDSS
VDS=-80V,VGS=0V
TJ=85℃
-30
uA
On-State Drain Current
ID(on)
VDS≦-15V,VGS=-10V
-1.6
A
VGS=-10V,ID=-1.0A
505
600
Drain-Source On-Resistance
RDS(on)
VGS=-4.5V,ID=-0.5A
535
650
mΩ
Forward Transconductance
gFS
VDS=-15V,ID=-0.5A
2.8
S
Diode Forward Voltage
VSD
IS=-0.5A,VGS=0V
-0.75
-1.3
V
Dynamic
Total Gate Charge
Qg
9
20
Gate-Source Charge
Qgs
2.5
Gate-Drain Charge
Qgd
VDS=-75V,VGS=-10V
ID≡-0.5A
3.5
nC
Input Capacitance
Ciss
450
650
Output Capacitance
Coss
50
Reverse Transfer Capacitance
Crss
VDS=-25V,VGS=0V
f=1MHz
30
pF
td(on)
10
20
Turn-On Time
tr
15
30
td(off)
20
40
Turn-Off Time
tf
VDD=-75V,RL=75Ω
ID≡-1.0A,VGEN=-10V
RG=6.0Ω
15
30
ns



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