General Description
AFP2325A, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.

Features
-100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V
-100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design