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F2HNK60Z Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza F2HNK60Z
Descripción Electrónicos  N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET
PDF  16 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

F2HNK60Z Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
1
50
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±
10
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID= 1.0A
4.4
4.8
Ω
Table 5.
Dynamic
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward Transconductance
VDS =15V, ID = 1.0A
1.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V, f=1 MHz, VGS=0
280
38
7
pF
pF
pF
Coss eq
(2)
2.
Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent Output
Capacitance
VGS=0, VDS =0V to 480V
30
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 2.0A
VGS =10V
(see Figure 18)
11
2.25
6
15
nC
nC
nC



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