F2HNK60Z datasheet(3/16 Pages) STMICROELECTRONICS

No. de pieza	F2HNK60Z

Descripción Electrónicos	N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

PDF	16 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IPAK/DPAK TO-220FP TO-92

VDS

Drain-Source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20kΩ)

600

VGS

Gate-Source Voltage

±30

Drain Current (continuous) at TC = 25°C

2.0

0.5

Drain Current (continuous) at TC=100°C

1.26

0.32

IDM

(1)

Pulse width limited by safe operating area

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.36

0.16

0.025

W/°C

VESD(G-S) Gate Source ESD (HBM-C=100pF, R=1.5kΩ)

2000

VISO

Insulation withstand voltage (DC)

2500

dv/dt(2)

ISD ≤2A, di/dt ≤200A/µs, VDD =80%V(BR)DSS

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

Maximum lead temperature for soldering

purpose

300

260

°C

Table 2.

Thermal data

IPAK/DPAK TO-220FP TO-92

Rthj-case

Thermal resistance junction-case Max

2.77

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient Max

100

62.5

120

°C/W

Rthj-lead

Thermal resistance junction-lead Max

°C/W

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAR, VDD=50V)

120

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