AP20G06GD

60V N+P-Channel Enhancement Mode MOSFET

AP20G06GD RVE1.0

永源微電子科技有限公司

N-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

65

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.063

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=5A

---

32

40

mΩ

VGS=4.5V , ID=4A

---

48

60

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.75

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.24

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=4A

---

28

---

S

Qg

Total Gate Charge (4.5V)

VDS=48V , VGS=4.5V , ID=4A

---

19

---

nC

Qgs

Gate-Source Charge

---

2.6

---

Qgd

Gate-Drain Charge

---

4.1

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V

, RG=3.3Ω,

ID=4A

---

3

---

ns

Tr

Rise Time

---

34

---

Td(off)

Turn-Off Delay Time

---

23

---

Tf

Fall Time

---

6.0

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1027

---

pF

Coss

Output Capacitance

---

65

---

Crss

Reverse Transfer Capacitance

---

45

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

2.5

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,IAS =21A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation