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AP20G06GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20G06GD
Descripción Electrónicos  60V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20G06GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G06GD
60V N+P-Channel Enhancement Mode MOSFET
AP20G06GD RVE1.0
永源微電子科技有限公司
Description
The AP20G06GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =25A
RDS(ON) < 40mΩ @ VGS=10V （Type：32mΩ）
VDS = -60V ID =-19A
RDS(ON) < 90mΩ @ VGS=-10V （Type：70mΩ）
Application
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G06GD
TO-252-4L
AP20G06GD XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
25
-19
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
14
-8.5
A
IDM
Pulsed Drain Current2
60
-30
A
EAS
Single Pulse Avalanche Energy3
22
29.8
mJ
IAS
Avalanche Current
21
-19
A
PD@TC=25
℃
Total Power Dissipation4
50
50
W
TSTG
Storage Temperature Range
-55 to 175
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
3
℃/W
2500


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