AP20G03BDF

30V N+P-Channel Enhancement Mode MOSFET

AP20G03BDF REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-30

-

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = -30V, VGS = 0V

-

-

-1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-0.7

-1.1

-1.5

V

RDS(on)

Drain-Source on-Resistance4

VGS = -10V, ID = -5A

-

18

25

mΩ

VGS = -4.5V, ID = -3A

-

25

32

VGS = -4.5V, ID = -3A

52

65

gfs

Forward Transconductance4

VDS = -10V, ID = -5A

-

13

-

S

Ciss

Input Capacitance

VDS = -15V, VGS =0V,

f =1MHz

-

1005

-

pF

Coss

Output Capacitance

-

137

-

Crss

Reverse Transfer Capacitance

-

113

-

RG

Gate Resistance

f =1MHz

-

10

-

Ω

Qg

Total Gate Charge

VGS = -10V, VDS = -15V, ID=

-5A

-

20

-

nC

Qgs

Gate-Source Charge

-

3

-

Qgd

Gate-Drain Charge

-

5.5

-

td(on)

Turn-on Delay Time

VGS = -10V, VDD = -15V, ID=

-5A, RG= 3Ω

-

7.5

-

ns

tr

Rise Time

-

16

-

td(off)

Turn-off Delay Time

-

49

-

tf

Fall Time

-

32

-

trr

Body Diode Reverse Recovery Time

IF = -5A, dIF/dt = 100A/µs

-

21

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

12.5

-

nC

VSD

Diode Forward Voltage4

IS = -5A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current

TA=25°C

-

-

-7

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The EAS data shows Max. rating . The test condition is VDD=18V,RG=25Ω VGS=4.5V,L=0.1mH,IAS=18A

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.